DX8075 TEM Probe
PL Engineering Ltd. introduces new device – TEM Probe DX8075 for automated inspection of bulk crystals of thermoelectric material (TEM). The devices is developed to examine in express mode bulk crystals of thermoelectric material made by crystal growth, hot pressing, extrusion and other manufacturing methods. It is suitable for income control for thermoelectric materials.
- Seebeck Coefficient and Electric Conductivity
- Performance parameters profile along bulk crystal or mapping of wafers
- Automated inspection with data output
SPECIFICATIONS
DX8070 Measuring Parameters
Parameter measured | Units | Designation | Values | Accuracy, % |
Seebeck Coefficient | mV/K | a | 100...300 | 3 |
Electrical Conductivity | 1/(Ohm·cm) | s | 300...2000 | 5 |
DX8070 Sample Dimensions
Parameter | Units | Min | Max |
Ingot |
Length | mm | 40 | 110 |
Diameter | mm | 20 | 25* |
Wafers |
Thickness | mm | 0.1 | 30 |
Diameter | mm | 20 | 25* |
Parameter | Units | Values |
Step between the nearest Points, d | mm | 0.1-100 |
Accuracy of the Probe Positioning, Dx | mm | 0.02 |
Positioning Repeatability, dx | mm | ±0.04 |
Total Probe Travel Length, L | mm | 0...200 |
Voltage Range, U | mV | 0.01...2 |
Voltage Accuracy, DU | mV | ±3.5 |
Ambient Temperature Accuracy, DTamb | K | 0.5 |
Sample Electric Current, I | A | 0.5 - 5 |
Power Supply, AC V | Power Supply, AC V | 220+10/-15 |
Power Consumption, P | W | > 200 |
Operation Temperature, Ta | °C | 25±3 |
Ambient Humidity, RH | % | |