DX8075 TEM Probe

PL Engineering Ltd. introduces new device – TEM Probe DX8075 for automated inspection of bulk crystals of thermoelectric material (TEM). The devices is developed to examine in express mode bulk crystals of thermoelectric material made by crystal growth, hot pressing, extrusion and other manufacturing methods. It is suitable for income control for thermoelectric materials.

DX8075 key features

• Seebeck Coefficient and Electric Conductivity
• Performance parameters profile along bulk crystal or mapping of wafers
• Automated inspection with data output

SPECIFICATIONS

DX8070 Measuring Parameters

Parameter measured	Units	Designation	Values	Accuracy, %
Seebeck Coefficient	mV/K	a	100...300	3
Electrical Conductivity	1/(Ohm·cm)	s	300...2000	5

DX8070 Sample Dimensions

Parameter	Units	Min	Max
Ingot
Length	mm	40	110
Diameter	mm	20	25*
Wafers
Thickness	mm	0.1	30
Diameter	mm	20	25*

Parameter	Units	Values
Step between the nearest Points, d	mm	0.1-100
Accuracy of the Probe Positioning, Dx	mm	0.02
Positioning Repeatability, dx	mm	±0.04
Total Probe Travel Length, L	mm	0...200
Voltage Range, U	mV	0.01...2
Voltage Accuracy, DU	mV	±3.5
Ambient Temperature Accuracy, DTamb	K	0.5
Sample Electric Current, I	A	0.5 - 5
Power Supply, AC V	Power Supply, AC V	220+10/-15
Power Consumption, P	W	> 200
Operation Temperature, Ta	°C	25±3
Ambient Humidity, RH	%