DX8070

PL Engineering Ltd. introduces new device — TEM Probe DX8070> for automated inspection of bulk crystals of thermoelectric material (TEM). The devices is developed to examine in express mode bulk crystals of thermoelectric material made by crystal growth, hot pressing, extrusion and other manufacturing methods. It is suitable for income control for thermoelectric materials.

DX8020 key features

  • Seebeck Coefficient and Electric Conductivity
  • Performance parameters profile along bulk crystal or mapping of wafers
  • Automated inspection with data output

SPECIFICATIONS

DX8070 Measuring Parameters

Parameter measuredUnitsDesignationValuesAccuracy, %
Seebeck CoefficientmV/Ka100...3003
Electrical Conductivity1/(Ohm·cm)s300...20005

DX8070 Sample Dimensions

ParameterUnitsMinMax
Ingot
Lengthmm40110
Diametermm2025*
Wafers
Thicknessmm0.130
Diametermm2025*
ParameterUnitsValues
Step between the nearest Points, dmm0.1-100
Accuracy of the Probe Positioning, Dxmm0.02
Positioning Repeatability, dxmm±0.04
Total Probe Travel Length, Lmm0...200
Voltage Range, UmV0.01...2
Voltage Accuracy, DU mV±3.5
Ambient Temperature Accuracy, DTambK0.5
Sample Electric Current, IA0.5 - 5
Power Supply, AC VPower Supply, AC V220+10/-15
Power Consumption, PW> 200
Operation Temperature, Ta°C25±3
Ambient Humidity, RH%

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